AFT05MS031NR1 AFT05MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Typical Performance:
(13.6 Vdc, TA
=25?C, CW)
Frequency
(MHz)
Gps
(dB)
?D
(%)
P1dB
(W)
136--174
(1,4)
23.2
62.0
31
380--450
(2,4)
18.3
64.1
31
450--520
(3,4)
17.7
62.0
31
520
(5)
17.7
71.4
33
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
Test
Voltage
Result
155
(1)
CW
>65:1 at all
Phase Angles
0.55
(3 dB Overdrive)
17
No Device
Degradation
420
(2)
1.6
(3 dB Overdrive)
490
(3)
2.0
(3 dB Overdrive)
520
(5)
1.1
(3 dB Overdrive)
1. Measured in 136--174 MHz VHF broadband reference circuit.
2. Measured in 380--450 MHz UHF broadband reference circuit.
3. Measured in 450--520 MHz UHF broadband reference circuit.
4. The values shown are the minimum measured performance numbers across the
indicated frequency range.
5. Measured in 520 MHz narrowband test circuit.
Features
?
Characterized for Operation from 136 to 520 MHz
?
Unmatched Input and Output Allowing Wide Frequency Range Utilization
?
Integrated ESD Protection
?
Integrated Stability Enhancements
?
Wideband — Full Power Across the Band:
?
136--174 MHz
?
380--450 MHz
?
450--520 MHz
?
225?C Capable Plastic Package
?
Exceptional Thermal Performance
?
High Linearity for: TETRA, SSB, LTE
?
Cost--effective Over--molded Plastic Packaging
?
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
?
Output Stage VHF Band Mobile Radio
?
Output Stage UHF Band Mobile Radio
Document Number: AFT05MS031N
Rev. 1, 4/2013
Freescale Semiconductor
Technical Data
136--520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
AFT05MS031NR1
AFT05MS031GNR1
T O -- 2 7 0 -- 2
PLASTIC
AFT05MS031NR1
Figure 1. Pin Connections
(Top View)
Drain
Gate
Note: The backside of the package is the
source terminal for the transistor.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT05MS031GNR1
?
Freescale Semiconductor, Inc., 2012--2013.
All rights reserved.
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